ROHM's 4th Generation <span style='color:red'>SiC MOSFET</span> Bare Chips Adopted in Three EV Models of ZEEKR from Geely
  ROHM has announced the adoption of power modules equipped with 4th generation SiC MOSFET bare chips for the traction inverters in three models of ZEEKR EV brand from Zhejiang Geely Holding Group (Geely), a top 10 global automaker. Since 2023, these power modules have been mass produced and shipped from HAIMOSIC (SHANGHAI) Co., Ltd. - a joint venture between ROHM and Zhenghai Group Co., Ltd. to Viridi E-Mobility Technology (Ningbo) Co., Ltd, a Tier 1 manufacturer under Geely.  Geely and ROHM have been collaborating since 2018, beginning with technical exchanges, then later forming a strategic partnership focused on SiC power devices in 2021. This led to the integration of ROHM’s SiC MOSFETs into the traction inverters of three models: the ZEEKR X, 009, and 001. In each of these EVs, ROHM’s power solutions centered on SiC MOSFETs play a key role in extending the cruising range and enhancing overall performance.  ROHM is committed to advancing SiC technology, with plans to launch 5th generation SiC MOSFETs in 2025 while accelerating market introduction of 6th and 7th generation devices. What’s more, by offering SiC in various forms, including bare chips, discrete components, and modules, ROHM is able to promote the widespread adoption of SiC technology, contributing to the creation of a sustainable society.  ZEEKR Models Equipped with ROHM’s EcoSiC™The ZEEKR X, which features a maximum output exceeding 300kW and cruising range of more than 400km despite being a compact SUV, is attracting attention even outside of China due to its exceptional cost performance. The 009 minivan features an intelligent cockpit and large 140kWh battery, achieving an outstanding maximum cruising range of 822km. And for those looking for superior performance, the flagship model, 001, offers a maximum output of over 400kW from dual motors with a range of over 580km along with a four-wheel independent control system.  About ZEEKRZEEKR was launched in 2021 as the dedicated EV brand of Geely, a leading Chinese automaker that also owns well-established premium brands such as Volvo Cars and Lotus Cars. The name ZEEKR combines ZE, representing ZERO, the starting point of infinite possibilities, E for innovation in the electric era, and KR, the chemical symbol for krypton, a rare gas that emits light when energized. ZEEKR’s philosophy centers on harmonizing humanity, technology, and nature, aiming to redefine the perception of electric vehicles through innovative designs and technologies. The brand has garnered praise in markets outside of China, including in the US and Europe, for its impressive driving performance and range, with plans to expand sales to Western and Northern Europe.  Please visit ZEEKR's website for more information: https://zeekrglobal.com/  Market Background and ROHM’s EcoSiC™In recent years, there has been a push to develop more compact, efficient, lightweight electric systems to expand the adoption of next-generation electric vehicles (xEVs) and achieve environmental goals such as carbon neutrality. For electric vehicles in particular, improving the efficiency of the traction inverter, a key element of the drive system, is crucial for extending the cruising range and reducing the size of the onboard battery, heightening expectations for SiC power devices.  As the world’s first supplier to begin mass production of SiC MOSFETs in 2010, ROHM continues to lead the industry in SiC device technology development. These devices are now marketed under the EcoSiC™ brand, encompassing a comprehensive lineup that includes bare chips, discrete components, and modules. For more information, please visit the SiC page on ROHM’s website: https://www.rohm.com/products/sic-power-devices   EcoSiC™ BrandEcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.  EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.  Supporting InformationROHM is committed to providing application-level support, including the use of in-house motor testing equipment Additionally, by clicking on the URL below, users can access various supporting contents on ROHM’s website that facilitate the evaluation and introduction of 4th generation SiC MOSFETs, such as SPICE and other design models, simulation circuits for common applications (ROHM Solution Simulator), and evaluation board information.  https://www.rohm.com/products/sic-power-devices/sic-mosfet#supportInfo
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Release time:2024-09-03 10:42 reading:668 Continue reading>>
Ameya360:Renesas Introduces New Gate Driver IC for IGBTs and <span style='color:red'>SiC MOSFET</span>s Driving EV Inverters
  TOKYO, Japan — Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for electric vehicle (EV) inverters.  Gate driver ICs are essential components to EV inverters, providing an interface between the inverter control MCU and the IGBTs and SiC MOSFETs that deliver power to the inverter. They receive control signals from the MCU in the low-voltage domain and transfer these signals to rapidly turn power devices on and off in the high-voltage domain. To accommodate the higher voltages of EV batteries, the RAJ2930004AGM has a built-in 3.75kVrms (kV root mean square) isolator, which is higher than the 2.5kVrms isolator in the previous generation product, and can support power devices with a withstand voltage of up to 1200V. In addition, the new driver IC boasts superior CMTI (Common Mode Transient Immunity) performance at 150 V/ns (nanosecond) or higher, providing reliable communication and increased noise immunity while meeting the high voltages and fast switching speeds required in inverter systems. The new product offers the basic functions of a gate driver in a small SOIC16 package, making it ideal for cost-effective inverter systems.  New Gate Driver IC for 1200V Power Devices  The RAJ2930004AGM can be used together with Renesas IGBTs as well as with IGBTs and SiC MOSFETs from other manufacturers. In addition to traction inverters, the gate driver IC is ideal for a wide range of applications that use power semiconductors, such as on-board chargers and DC/DC converters. To help developers bring their products to market quickly, Renesas offers the xEV Inverter Kit solution that combines gate driver ICs with MCUs, IGBTs, and power management ICs, and plans to release a version incorporating the new gate driver IC in the first half of 2023.  “Renesas is pleased to offer the second-generation gate driver IC for automotive applications with high isolation voltage and superior CMTI performance," said Akira Omichi, Vice President of Renesas' Automotive Analog Application Specific Business Division. “We will continue to drive application development for EVs by offering solutions that minimize power loss and meet high levels of functional safety in our customers’ systems.”  Key Features of the RAJ2930004AGM Gate Driver IC  Isolation capabilities  ·Withstand Isolation voltage: 3.75kVrms  ·CMTI (Common Mode Transient Immunity): 150V/ns  Gate drive capabilities  ·Output peak current: 10A  Protection/fault detection functions  ·On-chip active Miller clamp  ·Soft turn-off  ·Overcurrent protection (DESAT protection)  ·Under voltage lockout (UVLO)  ·Fault feedback  Operating temperature range: -40 to 125°C (Tj:150°C max.)  This product will help increase the adoption of EVs by realizing cost-efficient inverters, thereby minimizing environmental impacts.
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Release time:2023-01-28 10:54 reading:2045 Continue reading>>

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